Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE)KOUKITU, Akinori; KUMAGAI, Yoshinao.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 32, pp 6907-6934, issn 0953-8984Article

Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experimentsFUJII, Tetsuo; YOSHII, Naoki; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 108-112, issn 0022-0248, 5 p.Article

Thermodynamics on halide vapor-phase epitaxy of InN using incl and InCl₃KUMAGAI, Yoshinao; TAKEMOTO, Kikurou; KOUKITU, Akinori et al.Journal of crystal growth. 2001, Vol 222, Num 1-2, pp 118-124, issn 0022-0248Article

Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloyKOUKITU, Akinori; KUMAGAI, Yoshinao; SEKI, Hisashi et al.Journal of crystal growth. 2000, Vol 221, pp 743-750, issn 0022-0248Conference Paper

Thermodynamics on tri-halide vapor-phase epitaxy of GaN and In_xGa_1-xN using GaCl₃ and InCl₃KUMAGAI, Yoshinao; TAKEMOTO, Kikurou; HASEGAWA, Takahiro et al.Journal of crystal growth. 2001, Vol 231, Num 1-2, pp 57-67, issn 0022-0248Article

Ab initio calculation for the decomposition process of GaN (0001) and (0 0 0 1) surfacesSUZUKI, Hikari; TOGASHI, Rie; MURAKAMI, Hisashi et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1632-1636, issn 0022-0248, 5 p.Article

Growth of thick Al_xGa_1-xN ternary alloy by hydride vapor-phase epitaxyYAMANE, Takayoshi; SATOH, Fumitaka; MURAKAMI, Hisashi et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 164-167, issn 0022-0248, 4 p.Conference Paper

Thermodynamic analysis of AlGaN HVPE growthKOUKITU, Akinori; KIKUCHI, Jun; KANGAWA, Yoshihiro et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 47-54, issn 0022-0248, 8 p.Conference Paper

Hydride vapor phase epitaxy of InN by the formation of InCl₃using In metal and Cl₂KUMAGAI, Yoshinao; KIKUCHI, Jun; NISHIZAWA, Yuuki et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 57-61, issn 0022-0248, 5 p.Conference Paper

Free exciton absorption in Ga_1―xZn_xN_1―xO_x alloysMAOFENG DOU; BALDISSERA, Gustavo; PERSSON, Clas et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 17-20, issn 0022-0248, 4 p.Conference Paper

Growth of thick AlN layers by hydride vapor-phase epitaxyKUMAGAI, Yoshinao; YAMANE, Takayoshi; KOUKITU, Akinori et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 62-67, issn 0022-0248, 6 p.Conference Paper

Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H₂ and N₂KUMAGAI, Yoshinao; IGI, Takahiro; ISHIZUKI, Masanari et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 60-65, issn 0022-0248, 6 p.Conference Paper

Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substratesNAGASHIMA, Toru; HAKOMORI, Akira; YANAGI, Hiroyuki et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 75-79, issn 0022-0248, 5 p.Conference Paper

Development of GaN wafers for solid-state lighting via the ammonothermal methodLETTS, Edward; HASHIMOTO, Tadao; IKARI, Masanori et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 66-68, issn 0022-0248, 3 p.Conference Paper

Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressureMURAKAMI, Hisashi; CHO, Hyun-Chol; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4954-4958, issn 0022-0248, 5 p.Conference Paper

Polarity dependence of AlN {0001} decomposition in flowing H₂KUMAGAI, Yoshinao; AKIYAMA, Kazuhiro; TOGASHI, Rie et al.Journal of crystal growth. 2007, Vol 305, Num 2, pp 366-371, issn 0022-0248, 6 p.Conference Paper

Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substratesKUMAGAI, Yoshinao; SATOH, Fumitaka; TOGASHI, Rie et al.Journal of crystal growth. 2006, Vol 296, Num 1, pp 11-14, issn 0022-0248, 4 p.Article

Comparison of GaN growth processes on GaAs(1 1 1)A and (1 1 1)B substrates studied by ab initio calculationMATSUO, Yuriko; KUMAGAI, Yoshinao; IRISAWA, Toshiharu et al.Journal of crystal growth. 2002, Vol 237-39, pp 1084-1088, issn 0022-0248, 2Conference Paper

Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxyHYUN JONG PARK; KIM, Hong-Yeol; JUN YOUNG BAE et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 85-88, issn 0022-0248, 4 p.Conference Paper

Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substratesFUJIKURA, Hajime; OSHIMA, Yuichi; MEGRO, Takeshi et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 38-43, issn 0022-0248, 6 p.Conference Paper

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaNFEIGELSON, B. N; ANDERSON, T. J; ABRAHAM, M et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 21-26, issn 0022-0248, 6 p.Conference Paper

Influence of surface atom arrangement on the growth of InN layers on GaAs (1 1 1)A and (1 11)B surfaces by metalorganic vapor-phase epitaxyMURAKAMI, Hisashi; TORII, Jun-Ichi; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2007, Vol 298, pp 387-389, issn 0022-0248, 3 p.Conference Paper

High-speed epitaxial growth of AlN above 1200°C by hydride vapor phase epitaxyNAGASHIMA, Toru; HARADA, Manabu; YANAGI, Hiroyuki et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 42-44, issn 0022-0248, 3 p.Conference Paper

Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxyNAGASHIMA, Toru; HARADA, Manabu; YANAGI, Hiroyuki et al.Journal of crystal growth. 2007, Vol 305, Num 2, pp 355-359, issn 0022-0248, 5 p.Conference Paper

Preparation of large GaN substratesMOTOKI, Kensaku; OKAHISA, Takuji; KOUKITU, Akinori et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 93, Num 1-3, pp 123-130, issn 0921-5107Article